As the semiconductor industry is now entering the Angstrom era, novel materials are the key to enabling continued scaling toward future device nodes. This presentation will give a historical perspective on the crucial role that materials discovery and development played in finding a high-k replacement for silicon dioxide as the gate dielectric in CMOS.
Current and future challenges, as well as opportunities, for materials solutions will be highlighted for both Logic and Memory applications.
Glen Wilk is a Vice President of Technology at ASM, where he has specialized in ALD materials for over 20 years, including high-k gate dielectrics. In addition, while at ASM he has also focused Si and Ge Epitaxy technology for advanced devices.
He previously worked at Texas Instruments and Bell Laboratories in Murray Hill, NJ, where he developed novel materials for Logic and Memory applications.
Glen received a B.S in Materials Science from Cornell University, and a PhD in Applied Physics from Harvard University.
He won the 2026 Distinguished Career Achievement Award in Materials Science from Cornell University.
His publications include an invited review paper in the Journal of Applied Physics on high-k gate dielectrics with approximately 6,000 citations.
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