Jesús A. del Alamo
MTL Director 
Donner Professor 
Professor of Electrical Engineering
Department of Electrical Engineering & Computer Science
Nanometer-scale III-V compound semiconductor transistors for future digital, RF, microwave and millimeter wave applications. Reliability of compound semiconductor transistors. Diamond transistors.
Rm. 38-246 | 617-253-4764 | alamo @ mit . edu

RESEARCH SCIENTIST
Alon Vardi, MTL 
Postdoctoral Associates
Young Tack Lee, MTL
Xin Zhao, MTL
Graduate Students
Xiaowei Cai, EECS
Alex Lednev, EECS
Ethan Lee, EECS
Wenjie Lu, EECS
UNDERGRaduate Student
Lisa Kong, DMSE
Visitor
Jerzy Kanicki, University of Michigan
Moshe Tordjman, Technion
Support Staff
Elizabeth Kubicki, Administrative Assistant
Mary O’Neil, Administrative Assistant
Selected Publications
Z. Yin, M. Tordjman, A. Vardi, R. Kalish, and J. A. del Alamo, “A Diamond:H/WO3 Metal-Oxide-Semiconductor Field-effect Transistor,” IEEE Electron Device Letts., vol. 39, pp. 540, 2018. 
X. Zhao, A. Vardi, and J. A. del Alamo, “Excess Off-state Current in InGaAs FinFETs,” IEEE Electron Device Letts., vol. 39, pp. 476, 2018. 
J. A. del Alamo and A. Guo, “Bias Stress Instability in GaN-based Field-effect Transistors,” Material Research Society Spring Meeting, Phoenix, AZ, 2018.
H. Gong, K. Ni, A. E. X. Zhang, A. L. Sternberg, J. A. Kozub, K. L. Ryder, R. F. Keller, L. D. Ryder, S. M. Weiss, R. A. Weller, K. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, A. Vardi, and J. A. del Alamo, “Scaling Effects on Single-event Transients in InGaAs FinFETs,” IEEE Trans. on Nuclear Science, vol. 65, pp. 296, 2018.
W. Lu, I. P. Roh, D.-M. Geum, S.-H. Kim, J. D. Song, L. Kong, and J. A. del Alamo, “10-nm Fin Width InGaSb p-Channel Self-aligned FinFETs using Antimonide-compatible Digital Etch,” IEEE International Electron Devices Meeting, pp. 433, San Francisco, CA, 2017.
A. Vardi, L. Kong, W. Lu, X. Cai, X. Zhao, J. Grajal, and J. A. del Alamo, “Self-aligned InGaAs FinFETs with 5-nm Fin-Width and 5-nm Gate-Contact Separation,” IEEE International Electron Devices Meeting, pp. 429, San Francisco, CA, 2017. 
X. Zhao, C. Heidelberger, E. A. Fitzgerald, W. Lu, and J. A. del Alamo, “Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs,” IEEE International Electron Devices Meeting, pp. 413, San Francisco, CA, 2017.
Y. Wu and J. A. del Alamo, “Anomalous Source-side Degradation of InAlN/GaN HEMTs under High-power Electrical Stress,” IEEE Trans. on Electron Devices, vol. 65, pp. 4435, 2017. 
A. Vardi, J. Lin, W. Lu, X. Zhao, A. Fernando-Saavedra, and J. A. del Alamo, “A Si-compatible Fabrication Process for Scaled Self-aligned InGaAs FinFETs,” IEEE Trans. Semiconductor Manufacturing, vol. 30, pp. 468, 2017. 
J. A. del Alamo, X. Cai, J. Lin, W. Lu, A. Vardi, and X. Zhao, “CMOS Beyond Si: Nanometer-scale III-V MOSFETs,” IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 25, Miami, FL, 2017.
J. A. del Alamo, A. Guo, and S. Warnock, “Gate Dielectric Reliability and Instability in GaN MISHEMTs for Power Electronics,” J. Mat. Research, vol. 32, pp. 3458, 2017. 
S. Warnock,  A. Lemus, J. Joh, S. Krishnan, S. Pendharkar, and J. A. del Alamo ”Time-dependent Dielectric Breakdown in High-voltage GaN MIS-HEMTs: The Role of Temperature,” IEEE Trans. on Electron Devices, vol. 64, pp. 1557, 2017. 
N. Kai, A. K. Stemberg, E. X. Zhang, J. A. Kozub, R. Jiang, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, D. McMorrow, J. Lin, A. Vardi, and J. A. del Alamo, “Understanding Charge Collection Mechanisms in InGaAs FinFETs using High-speed Pulsed-laser Transient Testing with Tunable Wavelength,” IEEE Trans. Nuclear Science, vol. 64, pp. 2069, 2017. 
X. Zhao, A. Vardi, and J. A. del Alamo, “Sub-thermal Subthreshold Characteristics in Top-down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs,” IEEE Electron Device Letts., vol. 38, pp. 855, 2017. 

J. A. del Alamo, theses awarded (July 1, 2018-June 30, 2019)
Degree	Student Name	Thesis Title	
S.B.	Lisa Kong	High-resolution Transmission Electron Microscopy of III-V FinFETs	
S.M.	Dongsung Choi	Analysis of Mo Sidewall Ohmic Contacts to InGaAs Fins	
M.Eng	Letitia Li	Switching Circuit Energy Balance in iLabs on Experimental Lab Server Architecture	
Ph.D.	Wenjie Lu	Antimonide-based III-V Multigate Transistors