The rapid growth of artificial intelligence demands faster, denser, and more energy-efficient memory across the memory hierarchy. Oxide-channel ferroelectric transistors offer a versatile platform for addressing these diverse requirements. In this talk, I will present our recent progress in fast, reliable capacitor-less DRAM and low-power ferroelectric NAND, highlighting their potential as a platform for the future of memory.
Ferroelectric Transistors: A Platform for the Future of Memory
MTL Seminar Series
Sijung Yoo, Samsung (SAIT)
Abstract
Bio
Dr. Sijung Yoo is a Principal Researcher at Samsung Advanced Institute of Technology (SAIT), where he leads ferroelectric device project. He received his B.S., M.S., and Ph.D. in Materials Science and Engineering from Seoul National University. His research focuses on emerging memory and logic devices through innovative materials design.
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