Abstract: NY Creates, in collaboration with the University at Albany, developed a set of 65- and 28nm-based memory test vehicles enabling fast materials screening and electrical characterization of device stacks with nanoscale contacts. Creates demonstrated a wide range of two and three terminal emerging memory devices at the 300mm wafer level including resistive memory (ReRAM), MRAM, ferroelectric, and selector devices.
Biography: Dr. Karsten Beckmann received a Ph.D. degree in Nanoscale Engineering from the University at Albany. He is currently an Integration Development Engineer with NY Creates and an Adjunct Professor at UAlbany working on emerging memory solutions with a focus on resistive and IMT-based selector devices.