In a press release [hyperlink] announcing the award, the president and CEO of SIA, John Neuffer, states that “research is the lifeblood of innovation, spurring new technologies that drive growth in the semiconductor industry and throughout the U.S. economy.” Ken Hansen, president and CEO of SRC is quoted as saying that “the University Research Award was established to recognize lifetime achievements in semiconductor research by university faculty.”
Prof. Hoyt is being honored for her contributions in the pioneering development of strained Si transistor technology. Since its first introduction in integrated circuit (IC) volume manufacturing in 2004, strained silicon has underpinned all subsequent generations of semiconductor IC technology to this date and is likely to remain so for the foreseeable future. The press release states that “Dr. Hoyt’s work helped to break the 10 nm barrier and is broadly adopted by companies such as Intel, TSMC, IBM, and others.” 10 nm refers to the most advanced IC technology today. The award will be presented at the SIA Annual Award Dinner on Nov. 29, 2018 in San Jose, CA.
Judy Hoyt received her PhD in Applied Physics at Stanford University and remained as senior research scientist there until she joined MIT EECS Department in 2000. At MIT she has been a member of MTL and has served as Associate Director of the lab.