The MIT/MTL Gallium Nitride (GaN) Energy Initiative, launched in 2012, brings together MIT researchers and industrial partners to advance the science and engineering of GaN-based materials and devices for energy applications. The Center explores advanced technologies and strategies for system applications ranging from RF power amplification to energy processing and power management, as well as advanced optoelectronics. The MIT-GaN, led by Prof. Tomas Palacios, is focused on GaN materials and devices which are compatible with Si fabrication technologies and work with industrial partners to accelerate the insertion of these devices into systems.