From left to right: Dr. Alex Guo, Professor Jesus del Alamo
Dr. Guo recently graduated with a Ph.D. from Professor Jesús del Alamo's group at MTL. She presented her work entitled "Bias Temperature Instability in GaN MOSFETs."
In this talk, Dr. Guo presented a comprehensive study of Bias Temperature Instability (BTI), a transistor instability problem caused by prolonged gate bias stress, in GaN MOSFETs. In her work, Dr. Guo developed a benign BTI characterization scheme and investigated the degradation of various device electrical parameters under continuous positive and negative bias stress. Based on the extensive experimental results, data analysis, and modeling, Alex proposed physical mechanisms responsible for the recoverable and permanent degradation observed in GaN MOSFETs due to BTI. Her research contributes fundamental understanding to elucidate the reliability and stability issues of high-voltage GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors, a promising device technology for high power switching applications.
Alex conducted her Ph.D. study under the supervision of Professor Jesús del Alamo. Her thesis committee members were Professor Dimitri Antoniadis and Professor Tomas Palacios. This work was performed at Microsystems Technology Laboratories and sponsored by the United States National Defense Science and Engineering Graduate Fellowship and the MIT GaN Energy Initiative. Alex' presentation at the 2015 International Reliability Physics Symposium (IRPS) earned her the Best Student Paper Award.
A video of the seminar can be found in the seminars section of our site.
--Microsystems Technology Laboratories