Shireen's PhD thesis research advances understanding on the physics of dielectric reliability in gallium nitride power transistors.
At the IEEE International Reliability Physics Symposium (IRPS) 2018 that took place in Burlingame, California in March, Shireen Warnock was given the Best Student Paper Award for her paper at IRPS 2017 that took place in Monterey, California last year. Shireen's 2017 IRPS paper was titled "OFF-state TDDB in High-Voltage GaN MIS-HEMTs," and was co-authored by Jesús A. del Alamo.
Shireen is currently a member of the Technical Staff at MIT Lincoln Laboratory. She completed her PhD in the Department of Electrical Engineering and Computer Science (EECS) at MIT under the supervision of Jesús A. del Alamo in MIT's Microsystems Technology Laboratories and EECS. In her paper, Shireen measures time-dependent dielectric breakdown (TDDB) in gallium nitride power transistors in the OFF state. She shows the impact of ultraviolet light on the dielectric breakdown statistics and demonstrates the need for thoughtful and careful measurement in order to make accurate lifetime estimations.
Please join us in congratulating Shireen for this great achievement!