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Since 1998, Andreia Cathelin has been with STMicroelectronics Crolles, France, currently in the Technology R&D, Technology and Design Platform division. She is a Senior Member of the Technical Staff, supporting internal and external customers on advanced technologies developments such as 28nm FDSOI CMOS or BiCMOS 55nm. Her major fields of interest are in the area of RF/mmW/THz systems for communications and imaging, where she is leading advanced design R&D projects. In addition, she manages the University Collaboration Program for Design topics, and is in charge of the ST-CMP interface. Andreia has important roles in several IEEE conferences and committees such as a member of the Executive Committee of ISSCC, the Steering Committee Chair of ESSCIRC-ESSDERC, and an officer at the VLSI Symposium on Circuits. She is also an elected SSCS AdCom member. She received an EE degree in 1994 from ISEN Lille followed, in 1998, by a PhD from the University of Lille, France. In 2013, she was awarded France's highest academic degree, the “habilitation à diriger des recherches” also from the University of Lille, France.
The revolution of the Internet of Things promises an exponential growth of connected devices. To sustain this market demand, the semiconductor industry requires a real breakthrough in energy efficiency both for the connected devices and for the communication infrastructure. Innovative solutions for very energy efficient systems are mandatory to continue the growth the semiconductor industry enjoyed, covering ultra-low power systems, energy management and harvesting. This talk will present the 28nm UTBB FD-SOI CMOS (Ultra-Thin Body and Buried-oxide Fully Depleted Silicon On Insulator) technology and its main features for analog, RF and mmW design. Two design examples (Gm-C analog filter and mmW Power Amplifier) will highlight the major advantages impacting system level features, and focus will be given on extensive usage of wide voltage range body biasing techniques.