Gallium Nitride MEMS and Microsystems
In the last few years we have seen rapid growth of III-V semiconductors geared towards a variety of applications where silicon performance falls short. GaN, a III-V semiconductor, is proven to be the material of choice for high-frequency, high-power, and high-temperature applications. GaN also offers a number of excellent mechanical properties, making it a suitable material for MEMS. This talk discusses the application of GaN micromechanical devices in timing and integrated sensing.