High-performance Vertical GaN Power Devices
Gallium Nitride (GaN) devices are very exciting candidates for next-generation power electronics. Vertical GaN power devices, in the last three to five years, have demonstrated superior performance to lateral GaN power devices, and show great potential for high-voltage and high-power applications. This talk presents a series of novel vertical GaN diodes and transistors, and provides fundamental understanding into the design and prospective of vertical GaN power devices.
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