From left to right: Prof. Jesús del Alamo, Dr. Yuhao Zhang, Prof. Tomas Palacios
PalaciosIn this talk titled "High-performance Vertical GaN Power Devices", Dr. Zhang presented both practical and fundamental aspects of vertical GaN power devices. In his thesis research, Dr. Zhang demonstrated a series of novel vertical GaN diodes and transistors, revealed the superior thermal performance of vertical GaN devices, unveiled the leakage and breakdown mechanisms in vertical GaN devices, and demonstrated the feasibility of making vertical GaN devices on low-cost silicon substrates (over a 100-fold reduction in wafer cost over single-crystal GaN wafers). Dr. Zhang's work strongly supports the great potential of vertical GaN devices for high-voltage and high-power applications.
Yuhao conducted his Ph. D. study under the supervision of Professor Tomás Palacios. His thesis committee members were Professor Jesús del Alamo and Professor David Perreault. This work was performed at Microsystems Technology Laboratories and mainly sponsored by the Advanced Research Projects Agency-Energy (ARPA-E).
A video of the seminar can be found in the seminars section of our site.
—Microsystems Technology Laboratories