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Yuhao Zhang holds a Ph. D. in electrical engineering from MIT. He received his B. S. in physics from Peking University in 2011, and S. M. in electrical engineering from MIT in 2013. He works with Prof. Tomás Palacios in the Microsystems Technology Laboratories at MIT. His research focuses on GaN devices for power applications.
Gallium Nitride (GaN) devices are very exciting candidates for next-generation power electronics. Vertical GaN power devices, in the last three to five years, have demonstrated superior performance to lateral GaN power devices, and show great potential for high-voltage and high-power applications. This talk presents a series of novel vertical GaN diodes and transistors, and provides fundamental understanding into the design and prospective of vertical GaN power devices.